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| TCLD10.. Series Vishay Semiconductors www..com Optocoupler with Photodarlington Output Description The TCLD10.. Series consists of a darlington phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead SO6L package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 15231 D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. 4 3 1 2 VDE Standards These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler for electrical safety requirements (will be replaced by IEC 747-5-1.2.3) C D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code TCLD1000 CTR Ranking >600% Remarks 4 Pin = Single channel Document Number 83516 Rev. A3, 19-Mar-01 15245 www.vishay.com 1 (10) TCLD10.. Series Vishay Semiconductors Features Approvals: www..com D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI 175 D Thickness through insulation 0.75 mm D Creepage distance > 8 mm D Tested acc. 60950: Am4: 1997 clause 2.9.6. General features: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 - Double Protection D CSA (C-UL) 1577 recognized file number E- 76222 - Double Protection D VDE 0884, Certificate number 132473 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Low profile package D Darlington output D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System W Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 6 60 1.5 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 35 7 80 100 150 125 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Value 5 250 -40 to +100 -40 to +100 235 Unit kV mW C C C www.vishay.com 2 (10) Document Number 83516 Rev. A3, 19-Mar-01 TCLD10.. Series Vishay Semiconductors Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF www..com Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 35 7 Typ. Max. Unit V V nA 100 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 10 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 2 V, IF = 1 mA Type TCLD1000 Symbol CTR Min. 6.0 Typ. 8.0 Max. Unit Document Number 83516 Rev. A3, 19-Mar-01 www.vishay.com 3 (10) TCLD10.. Series Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. www..com Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV C Insulation Rated Parameters (according to VDE 0884) Parameter Partial discharge test voltage - Routine test Partial discharge test voltage - g g Lot test (sample test) Insulation resistance Test Conditions 100%, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 8 1.3 1012 1011 109 Typ. Max. Unit kV kV kV VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C (construction test only) W W W Ptot - Total Power Dissipation ( mW ) 300 250 200 Phototransistor Psi ( mW ) VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd 150 100 50 0 0 25 50 75 100 125 150 IR-Diode Isi ( mA ) VIOWM VIORM 0 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres 94 9182 Tsi - Safety Temperature ( C ) t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 www.vishay.com 4 (10) Document Number 83516 Rev. A3, 19-Mar-01 TCLD10.. Series Vishay Semiconductors Switching Characteristics Parameter Rise time Turn-off time Test Conditions VCE = 2 V, IC = 10 mA, RL = 100 W ( (see figure 1) g ) Symbol tr toff Typ. 300 250 Unit www..com ms ms 0 IF IF +VCC IC = 10 mA; IF 96 11698 RG = 50 tp = 0.01 T tp = 50 ms Channel I 50 14779 0 tp IC Oscilloscope RI = 1 M CI = 20 pF 100% 90% t Channel II RL Figure 1. Test circuit, non-saturated operation 10% 0 tr td ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf t storage time fall time turn-off time Figure 2. Switching times Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1.3 IF=10mA VF - Forward Voltage ( V ) I F - Forward Current ( mA ) 20 40 60 80 100 14390 1000.0 1.2 1.1 1.0 0.9 0.8 0 100.0 10.0 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) Tamb - Ambient Temperature ( C ) 14389 Figure 3. Forward Voltage vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage Document Number 83516 Rev. A3, 19-Mar-01 www.vishay.com 5 (10) TCLD10.. Series Vishay Semiconductors CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30-20-10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 14393 www..com 1000.0 VCE=5V IF=1mA VCE=2V IC - Collector Current ( mA ) 100.0 10.0 1.0 0.1 0.1 1.0 10.0 100.0 14391 IF - Forward Current ( mA ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature 100000 10000 1000 100 10 1 20 14392 Figure 7. Collector Current vs. Forward Current 100.0 IC - Collector Current ( mA ) VCE=10V IF=0 IF=2mA 1mA 10.0 0.5mA ICEO- Collector Dark Current, with open Base ( nA ) 1.0 0.2mA 0.1mA 30 40 50 60 70 80 90 100 14394 0.1 0.1 1.0 10.0 100.0 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 6. Collector Dark Current vs. Ambient Temperature Figure 8. Collector Current vs. Collector Emitter Voltage Pin 1 Indication Type TCLD1000 901WTK27 15246 Date Code (YM) System Letter Company Logo Production Location Figure 9. Marking example www.vishay.com 6 (10) Document Number 83516 Rev. A3, 19-Mar-01 TCLD10.. Series Vishay Semiconductors Dimensions of TCLD10.. in mm www..com 15243 Document Number 83516 Rev. A3, 19-Mar-01 www.vishay.com 7 (10) TCLD10.. Series Vishay Semiconductors Dimensions of Reel in mm W1 www..com N A Reel Hub W2 16515 Version G Tape Width 16 A 330 1 N 100 1.5 W1 16.4 + 2 W2 max 22.4 Dimensions of Leader and Trailer in mm Trailer no devices devices Leader no devices End min. 200 min. 400 Start 96 11818 www.vishay.com 8 (10) Document Number 83516 Rev. A3, 19-Mar-01 TCLD10.. Series Vishay Semiconductors Dimensions of Tape in mm www..com 16516 Document Number 83516 Rev. A3, 19-Mar-01 www.vishay.com 9 (10) TCLD10.. Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. www..com We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 10 (10) Document Number 83516 Rev. A3, 19-Mar-01 |
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